JPH0478018B2 - - Google Patents

Info

Publication number
JPH0478018B2
JPH0478018B2 JP58166624A JP16662483A JPH0478018B2 JP H0478018 B2 JPH0478018 B2 JP H0478018B2 JP 58166624 A JP58166624 A JP 58166624A JP 16662483 A JP16662483 A JP 16662483A JP H0478018 B2 JPH0478018 B2 JP H0478018B2
Authority
JP
Japan
Prior art keywords
region
type
epitaxial layer
main surface
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58166624A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6058657A (ja
Inventor
Toshihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58166624A priority Critical patent/JPS6058657A/ja
Publication of JPS6058657A publication Critical patent/JPS6058657A/ja
Publication of JPH0478018B2 publication Critical patent/JPH0478018B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58166624A 1983-09-12 1983-09-12 半導体集積回路装置 Granted JPS6058657A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58166624A JPS6058657A (ja) 1983-09-12 1983-09-12 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58166624A JPS6058657A (ja) 1983-09-12 1983-09-12 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6058657A JPS6058657A (ja) 1985-04-04
JPH0478018B2 true JPH0478018B2 (en]) 1992-12-10

Family

ID=15834739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58166624A Granted JPS6058657A (ja) 1983-09-12 1983-09-12 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6058657A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62165354A (ja) * 1986-01-16 1987-07-21 Hitachi Ltd 半導体集積回路装置
JPH0770687B2 (ja) * 1986-04-24 1995-07-31 松下電子工業株式会社 半導体集積回路
US4980746A (en) * 1988-04-29 1990-12-25 Dallas Semiconductor Corporation Integrated circuit with improved battery protection
JP3161508B2 (ja) * 1996-07-25 2001-04-25 日本電気株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422277A (en) * 1977-07-18 1979-02-20 Shinya Minemura Making of ornamental material from flowers or leaves
JPS54148388A (en) * 1978-05-12 1979-11-20 Nec Corp Semiconductor integrated circuit device
US4325180A (en) * 1979-02-15 1982-04-20 Texas Instruments Incorporated Process for monolithic integration of logic, control, and high voltage interface circuitry
JPS5612766A (en) * 1979-07-11 1981-02-07 Toshiba Corp Input protective device for complementary insulation gate field-effect transistor

Also Published As

Publication number Publication date
JPS6058657A (ja) 1985-04-04

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